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1

A comprehensive review of ZnO materials and devices

Ozgur, U., Alivov, Ya. I., Liu, C., Teke, A., Reshchikov, M. A., Dogan, S., Avrutin, V., Cho, S.-J., Morkoc, H.

Journal:

Journal of Applied Physics

Year:

2005

Language:

english

File:

PDF, 3.26 MB

english, 2005

2

Unstable luminescence in GaN and ZnO

M.A. Reshchikov, Y.T. Moon, X. Gu, B. Nemeth, J. Nause, H. Morkoç

Journal:

Physica B: Condensed Matter

Year:

2006

Language:

english

File:

PDF, 234 KB

english, 2006

3

Luminescence properties of defects in ZnO

M.A. Reshchikov, H. Morkoç, B. Nemeth, J. Nause, J. Xie, B. Hertog, A. Osinsky

Journal:

Physica B: Condensed Matter

Year:

2007

Language:

english

File:

PDF, 171 KB

english, 2007

4

Photoluminescence from structural defects in GaN

M.A Reshchikov, J Jasinski, Z Liliental-Weber, D Huang, L He, P Visconti, H Morkoç

Journal:

Physica B: Condensed Matter

Year:

2003

Language:

english

File:

PDF, 261 KB

english, 2003

5

Characterization of GaN and InxGa1−xN films grown by MOCVD and MBE on free-standing GaN templates and quantum well structures

K. S. Ramaiah, D. Huang, M. A. Reshchikov, F. Yun, H. Morkoç, J. Jasinski, Z. Liliental-Weber, C. Sone, S. S. Park, K. Y. Lee

Journal:

Journal of Materials Science: Materials in Electronics

Year:

2003

Language:

english

File:

PDF, 1.72 MB

english, 2003

6

Luminescence properties of defects in GaN

Reshchikov, Michael A., Morkoc, Hadis

Journal:

Journal of Applied Physics

Year:

2005

Language:

english

File:

PDF, 2.36 MB

english, 2005

7

Defect-Related Luminescence in Undoped GaN Grown by HVPE

Reshchikov, M.A., Usikov, A., Helava, H., Makarov, Yu.

Journal:

Journal of Electronic Materials

Year:

2015

Language:

english

File:

PDF, 628 KB

english, 2015

8

Band bending near the surface in GaN as detected by a charge sensitive probe

Sabuktagin, S., Reshchikov, M. A., Johnstone, D. K., Morkoç, H.

Journal:

MRS Proceedings

Year:

2003

Language:

english

File:

PDF, 174 KB

english, 2003

9

[Semiconductors and Semimetals] Defects in Semiconductors Volume 91 || Point Defects in GaN

Reshchikov, Michael A.

Year:

2015

Language:

english

File:

PDF, 5.30 MB

english, 2015

10

Effect of Capping on Electrical and Optical Properties of GaN Layers Grown by HVPE

Reshchikov, M. A., Usikov, A., Helava, H., Makarov, Yu., Puzyk, M. V., Papchenko, B. P.

Journal:

Journal of Electronic Materials

Year:

2016

Language:

english

File:

PDF, 1.01 MB

english, 2016

11

A new species of Cylloceria Schiødte, 1838 (Hymenoptera, Ichneumonidae) from the Oriental Region

LIU, JING-XIAN, RESHCHIKOV, ALEXEY

Journal:

Year:

2019

Language:

english

File:

PDF, 5.93 MB

english, 2019

12

Investigation of Defects and Polarity in GaN Using Hot Wet Etching, Atomic Force and Transmission Electron Microscopy and Convergent Beam Electron Diffraction

P. Visconti, D. Huang, M.A. Reshchikov, F. Yun, T. King, A.A. Baski, R. Cingolani, C.W. Litton, J. Jasinski, Z. Liliental-Weber, H. Morkoç

Journal:

physica status solidi (b)

Year:

2001

Language:

english

File:

PDF, 153 KB

english, 2001

13

A Comparative Study of MBE-Grown GaN Films Having Predominantly Ga- or N-Polarity

F. Yun, D. Huang, M.A. Reshchikov, T. King, A.A. Baski, C.W. Litton, J. Jasinski, Z. Liliental-Weber, P. Visconti, H. Morkoç

Journal:

physica status solidi (b)

Year:

2001

Language:

english

File:

PDF, 318 KB

english, 2001

14

Polarity of GaN Grown on Sapphire by Molecular Beam Epitaxy with Different Buffer Layers

D. Huang, P. Visconti, M.A. Reshchikov, F. Yun, T. King, A.A. Baski, C.W. Litton, J. Jasinski, Z. Liliental-Weber, H. Morkoç

Journal:

physica status solidi (a)

Year:

2001

Language:

english

File:

PDF, 115 KB

english, 2001

15

Rapid Delineation of Extended Defects in GaN and a Novel Method for Their Reduction

P. Visconti, D. Huang, F. Yun, M.A. Reshchikov, T. King, R. Cingolani, J. Jasinski, Z. Liliental-Weber, H. Morkoç

Journal:

physica status solidi (a)

Year:

2002

Language:

english

File:

PDF, 328 KB

english, 2002

16

Resonance and relaxation ultrasonic attenuation in p-GaAs: Mn at low temperature

N.S. Averkiev, A.A. Gutkin, O.G. Krasikova, E.B. Osipov, M.A. Reshchikov

Journal:

Solid State Communications

Year:

1988

Language:

english

File:

PDF, 288 KB

english, 1988

17

Persistent photoluminescence in high-purity GaN

M.A. Reshchikov, M. Zafar Iqbal, S.S. Park, K.Y. Lee, D. Tsvetkov, V. Dmitriev, H. Morkoç

Journal:

Physica B: Condensed Matter

Year:

2003

Language:

english

File:

PDF, 328 KB

english, 2003

18

Manifestation of edge dislocations in photoluminescence of GaN

M.A. Reshchikov, D. Huang, L. He, H. Morkoç, J. Jasinski, Z. Liliental-Weber, S.S. Park, K.Y. Lee

Journal:

Physica B: Condensed Matter

Year:

2005

Language:

english

File:

PDF, 351 KB

english, 2005

19

Luminescence from defects in GaN

M.A. Reshchikov, H. Morkoç

Journal:

Physica B: Condensed Matter

Year:

2006

Language:

english

File:

PDF, 163 KB

english, 2006

20

Anomalous shifts of blue and yellow luminescence bands in MBE-grown ZnO films

M.A. Reshchikov, V. Avrutin, N. Izyumskaya, R. Shimada, H. Morkoç

Journal:

Physica B: Condensed Matter

Year:

2007

Language:

english

File:

PDF, 268 KB

english, 2007

21

On quantum efficiency of photoluminescence in ZnO layers and nanostructures

M.A. Reshchikov, A. El-Shaer, A. Behrends, A. Bakin, A. Waag

Journal:

Physica B: Condensed Matter

Year:

2009

Language:

english

File:

PDF, 342 KB

english, 2009

22

Defect-related photoluminescence in Mg-doped GaN nanostructures

M.A. Reshchikov, F. Shahedipour-Sandvik, B.J. Messer, V. Jindal, N. Tripathi, M. Tungare

Journal:

Physica B: Condensed Matter

Year:

2009

Language:

english

File:

PDF, 408 KB

english, 2009

23

Role of the surface in the electrical and optical properties of GaN

M. Foussekis, J.D. Ferguson, A.A. Baski, H. Morkoç, M.A. Reshchikov

Journal:

Physica B: Condensed Matter

Year:

2009

Language:

english

File:

PDF, 472 KB

english, 2009

24

Electrical, structural, and optical characterization of free-standing GaN template grown by hydride vapor phase epitaxy

F Yun, M.A Reshchikov, K Jones, P Visconti, H Morkoç, S.S Park, K.Y Lee

Journal:

Solid-State Electronics

Year:

2000

Language:

english

File:

PDF, 306 KB

english, 2000

25

Hall mobility and carrier concentration in free-standing high quality GaN templates grown by hydride vapor phase epitaxy

D. Huang, F. Yun, M.A. Reshchikov, D. Wang, H. Morkoç, D.L. Rode, L.A. Farina, Ç. Kurdak, K.T. Tsen, S.S. Park, K.Y. Lee

Journal:

Solid-State Electronics

Year:

2001

Language:

english

File:

PDF, 180 KB

english, 2001

26

GaN/AlGaN back-illuminated multiple-quantum-well Schottky barrier ultraviolet photodetectors

A Teke, S Dogan, F Yun, M.A Reshchikov, H Le, X.Q Liu, H Morkoç, S.K Zhang, W.B Wang, R.R Alfano

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 305 KB

english, 2003

27

Acceptors in undoped GaN studied by transient photoluminescence

R.Y Korotkov, M.A Reshchikov, B.W Wessels

Journal:

Physica B: Condensed Matter

Year:

2003

Language:

english

File:

PDF, 160 KB

english, 2003

28

Transient photoluminescence of defects in undoped GaN prepared by metal organic vapor phase epitaxy

R.Y Korotkov, M.A Reshchikov, B.W Wessels

Journal:

Physica B: Condensed Matter

Year:

1999

Language:

english

File:

PDF, 112 KB

english, 1999

29

Deep acceptors in undoped GaN

M.A. Reshchikov, F. Shahedipour, R.Y. Korotkov, M.P. Ulmer, B.W. Wessels

Journal:

Physica B: Condensed Matter

Year:

1999

Language:

english

File:

PDF, 120 KB

english, 1999

30

Investigation of defects and surface polarity in GaN using hot wet etching together with microscopy and diffraction techniques

P Visconti, D Huang, M.A Reshchikov, F Yun, R Cingolani, D.J Smith, J Jasinski, W Swider, Z Liliental-Weber, H Morkoç

Journal:

Materials Science and Engineering: B

Year:

2002

Language:

english

File:

PDF, 241 KB

english, 2002

31

Effect of potential fluctuations on photoluminescence in Mg-doped GaN

M. A. Reshchikov, J. Xie, L. He, X. Gu, Y. T. Moon, Y. Fu, H. Morkoç

Journal:

physica status solidi (c)

Year:

2005

Language:

english

File:

PDF, 99 KB

english, 2005

32

Origin of unstable photoluminescence in GaN: metastable defects or surface states?

M. A. Reshchikov, Y. T. Moon, H. Morkoç

Journal:

physica status solidi (c)

Year:

2005

Language:

english

File:

PDF, 221 KB

english, 2005

33

Transient photovoltage in GaN

M. A. Reshchikov, S. Sabuktagin, D. K. Johnstone, A. A. Baski, H. Morkoç

Journal:

physica status solidi (c)

Year:

2005

Language:

english

File:

PDF, 176 KB

english, 2005

34

Evaluation of GaN by photoluminescence measurement

Michael A. Reshchikov

Journal:

physica status solidi (c)

Year:

2011

Language:

english

File:

PDF, 267 KB

english, 2011

35

Electrical and optical properties of GaN studied by surface photovoltage and photoluminescence

M. A. Foussekis, A. A. Baski, M. A. Reshchikov

Journal:

physica status solidi (c)

Year:

2011

Language:

english

File:

PDF, 212 KB

english, 2011

36

A study of some biochemical and biophysical characteristics of a subpopulation of rat thymocytes isolated in a ficoll gradient

E. A. Zherbin, K. P. Khanson, V. I. Vashchenko, A. M. Reshchikov, A. Yu. Sungurov, A. B. Chukhlovin

Journal:

Bulletin of Experimental Biology and Medicine

Year:

1981

Language:

english

File:

PDF, 264 KB

english, 1981

37

Fractionation of mouse bone marrow cells by preparative electrophoresis

V. M. Kotel'nikov, V. P. Reshchikov, N. M. Fertukova, O. A. Gurevich, N. A. Rudneva, G. I. Kozinets

Journal:

Bulletin of Experimental Biology and Medicine

Year:

1982

Language:

english

File:

PDF, 282 KB

english, 1982

38

Effect of ambient on photoluminescence from GaN grown by molecular-beam epitaxy

M. Zafar Iqbal, M. A. Reshchikov, L. He, H. Morkoç

Journal:

Journal of Electronic Materials

Year:

2003

Language:

english

File:

PDF, 84 KB

english, 2003

39

Unusual properties of the dominant acceptor in freestanding GaN

M.A. Reshchikov, S.S. Park, K.Y. Lee, H. Morkoç

Journal:

Physica B: Condensed Matter

Year:

2003

Language:

english

File:

PDF, 276 KB

english, 2003

40

Polarization photoluminescence study of the complex VGaTeAsinn-type GaAs in the temperature range 77–230 K

A. A. Gutkin, M. A. Reshchikov, V. E. Sedov

Journal:

Year:

1997

Language:

english

File:

PDF, 166 KB

english, 1997

41

Optical characteristics of 1.18-eV luminescence band complexes inn-GaAs:Sn(Si): Results of a photoluminescence study with polarized resonant excitation

A. A. Gutkin, M. A. Reshchikov, V. E. Sedov, T. Piotrowski, J. Pultorak

Journal:

Year:

1998

Language:

english

File:

PDF, 152 KB

english, 1998

42

Characteristic features of the temperature dependence of the photoluminescence polarization of {Ga vacancy}-SnGa(SiGa) complexes in GaAs produced as a result of resonant polarized excitation

A. A. Gutkin, M. A. Reshchikov, V. E. Sedov

Journal:

Year:

1999

Language:

english

File:

PDF, 84 KB

english, 1999

43

Change in the energy of Jahn-Teller configurations of vacancy-donor complexes induced by uniaxial strain

N. S. Averkiev, A. A. Gutkin, M. A. Reshchikov

Journal:

Year:

1999

Language:

english

File:

PDF, 80 KB

english, 1999

44

Comparison of the polarizations of the 1.2-eV photoluminescence band inn-GaAs:Te under uniaxial pressure and resonance polarized excitation

A. A. Gutkin, M. A. Reshchikov, V. E. Sedov

Journal:

Year:

2000

Language:

english

File:

PDF, 85 KB

english, 2000

45

Thermal transport of charge and polarization of 1.2-eV luminescence broad band in uniaxially strainedn-GaAs:Te

A. A. Gutkin, M. A. Reshchikov

Journal:

Year:

2003

Language:

english

File:

PDF, 72 KB

english, 2003

46

Piezospectroscopic study of the emission band ofn-GaAs:S peaked at about 1.2 eV

A. A. Gutkin, M. A. Reshchikov

Journal:

Year:

2004

Language:

english

File:

PDF, 67 KB

english, 2004

47

SPIE Proceedings [SPIE SPIE OPTO - San Francisco, California (Saturday 22 January 2011)] Gallium Nitride Materials and Devices VI - Optimization of ZnO:Ga properties for application as a transparent conducting oxide in InGaN-based light-emitting diodes

Liu, H. Y., Li, X., Liu, S., Ni, X., Avrutin, V., Izyumskaya, N., Özgür, Ü., Yankovich, A. B., Kvit, A. V., Voyles, P. M., Reshchikov, M. A., Morkoç, H., Chyi, Jen-Inn, Nanishi, Yasushi, Morkoç, Hadis

Year:

2011

Language:

english

File:

PDF, 860 KB

english, 2011

48

Highly conductive and optically transparent GZO films grown under metal-rich conditions by plasma assisted MBE

H. Y. Liu, V. Avrutin, N. Izyumskaya, M. A. Reshchikov, Ü. Özgür, H. Morkoç

Journal:

physica status solidi (RRL) - Rapid Research Letters

Year:

2010

Language:

english

File:

PDF, 242 KB

english, 2010

49

Application of a statistical model in crystal field theory

Yu. N. Reshchikov, A. P. Nikolaev, A. N. Men'

Journal:

Theoretical and Experimental Chemistry

Year:

1974

Language:

english

File:

PDF, 160 KB

english, 1974

50

Synthesis and antileukemic activity of ara-cytidylyl[5′→ 5′ ]-6-methylpurine riboside

E. I. Kvasyuk, T. I. Kulak, I. A. Mikhailopulo, V. P. Reshchikov, N. M. Fertukova

Journal:

Pharmaceutical Chemistry Journal

Year:

1984

Language:

english

File:

PDF, 396 KB

english, 1984

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